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Deposition | ALD Atomic Layer Deposition | PE-CVD Systems

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thin-films
AT200M
ALD Systems
ANRIC
AT200M ALD system
The AT200M utilizes semiconductor grade components. Metal-sealed lines and a robust PLC driven user interface, fast cycling and high-quality single component th
(2") 50 mm
Up to 300°C
Table-top system
Thin-Films
AT410
ALD Systems
ANRIC
AT410-1 ALD System
Table-Top Atomic Layer Deposition ALD System, suitable for up to 5 lines. Substrate size up to 4" (100mm) diameter (Other Wafer Sizes on Request!)
(4") 100 mm
Up to 330°C
Table-top system
Thin-Films
AT610
ALD Systems
ANRIC
AT610 ALD System
Table-Top Atomic Layer Deposition ALD System, suitable for up to 5 lines. Substrate size up to 6" (150mm) diameter
(6") 150 mm
Up to 330°C
Table-top system
thin-films
AT650P
ALD Systems
ANRIC
AT650P ALD System
(6") 150 mm
Up to 400°C
Bench-top System
thin-films
AT650T
ALD Systems
ANRIC
AT650T ALD System
(6") 150 mm
Up to 400°C
Bench-top System
thin-films
Plasma-ALD-sys
Plasma ALD
SYSKEY TECHNOLOGY Co., Ltd.
Plasma ALD
This process allows fabricating the conformal thin films of various materials with atomic-scale control without high temperature required to deliver the necessa
up to 12 inch
thin-films
Thermal-ALD-sys
Thermal ALD
SYSKEY TECHNOLOGY Co., Ltd.
Thermal ALD
In most ALD reactions, two chemicals are used as precursors. These precursors react with the material surface in a continuous and self-limiting manner.
up to 300 mm