ANRIC

AT650T ALD System

AT650T ALD System
ANRIC

AT650T ALD System

Upgradeable to plasma, in the field
 Warm walled aluminum chamber
 High exposure available with static processing mode
 Simple system maintenance and low utilities cost

The AT650T is a small footprint desktop thermal ALD tool with in-field upgradeability to Plasma. It is designed with a streamlined chamber design and small chamber volume, while also offering fast cycling capability and high exposure for deep penetration processing.

The AT650T has a small footprint (15″ by 15″), benchtop installation and is fully cleanroom compatible. Its fast cycling capability and high exposure make deep penetration processing possible. Due to its simple system maintenance and low utilities cost, this tool is a very cost effective desktop thermal ALD system.

Features

  • Smallest Footprint (15″ by 15″) Desktop Thermal ALD, fully cleanroom compatible
  • Upgradeable to plasma, in the field
  • Simple system maintenance and low utilities cost
  • Streamlined chamber design and small chamber volume
  • Fast cycling capability and high exposure, deep penetration processing available
  • Substrate temperatures from RT to 400°C ± 1 °C; Precursor temperatures from RT to 185°C ± 2°C (w/ heating jacket)
  • Accommodates samples of 6" diameter with optional customizable chucks
  • Warm walled aluminum chamber with heated sample holder from 40 – 400°C
  • 3 organometallic sources (can be heated to 185°C with nitrogen assist), 1 at RT (upgradeable to 185°C) and up to 4 oxidant/ reductant sources
  • High temperature compatible fast pulsing ALD valves with ultrafast MFC for integrated inert gas purge - standard
  • Substrate temperature to 400°C
  • High exposure available with static processing mode
  • Integrated matching network
  • Full HW and SW interlocks for safe operation even in multi-user environment

Options

  • Upgrade to Plasma • Customized chuck/platen
  • ATOzone - ozone generator (required for some films: Pt, Ir, SiO2, MoO2, high quality Al2O3 below 60°C, high quality HfO2)
  • QCM (Quartz Crystal Microbalance)
  • Additional Counter reactant lines (MFC controlled) – up to 2 additional
  • Optional 4th heated precursor (185°C)
  • Additional heated precursor line to 185°C for 4 total