Thermal ALD

In most ALD reactions, two chemicals are used as precursors. These precursors react with the material surface in a continuous and self-limiting manner.

Applications

• High-k gate oxides.
• Passivation of crystal silicon solar cells and OLED.
• MEMS.
• Nano-electronics.
• Coating of nano-porous structures.
• Optical functional films.
• Encapsulation.

Configurations

• Flexible substrate size up to 300 mm in diameter.
• Excellent thin-film uniformity of less than ±1%.
• High conformity with processing of high aspect ratio and complex structures.
• Precursor Sources up to 6 precursors individually heated to 200°C.
• Fast pulse gas delivery valves with 10 msec response time.
• Substrate heater up to 400°C.
• Materials.
• Al₂O₃, HfO₂, SiO₂, TiO₂, Ta₂O₅, ZnO, AZO, HfO₂ , SiO₂, TiO₂, GaO₂, AlN, SiN, Pt…

Chamber

• Aluminum or stainless steel chamber with small footprint for fast cycle time.
• Chamber temperature control by using heater jacket.

Options

• Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box.
• Spectroscopic Ellipsometer Ports.
• Cluster allows for vacuum transfer of substrates.