LPCVD

It can provide some energy for the deposition reaction. Compared with the PECVD, ICP-CVD can deposit various films at a lower temperature without degrading the film quality.

Applications

• Growth of CNT and graphene.
• SiOx, SiNx, a-Si, DLC and other films.
• Annealing.
• Diffusion.
• Oxidation.

Configurations

• Flexible substrate size up to 8 inch wafers in diameter.
• Single wafer or multi wafers.
• Excellent thin-film uniformity of less than ±5%.
• Mass flow controllers with highly uniform gas distribution up to 10 gas lines.
• Substrate heating up to 1700°C by stable process temperatures control.

Chamber

• Horizontal or Vertical  Furnace with loading mechanism.

Options

• Intergrated with Load-Lock (single substrate, cassette-to-cassette).