The high density plasma is created, surrounded by the coil, and act as the secondary coil in a transformer, accelerating the electrons and ions, and thus causing collisions that produce even more ions and electrons.
Applications
Basic plasma research.
Photo-resist etching.
III-V compound semiconductors (GaAsn, InP, GaN).
Si, SiO2, SiNx.
MEMS.
metal, silicon, resist etching.
Configurations
Flexible substrate size up to 12 inch in diameter.
Excellent thin-film uniformity of less than ±3%.
Mass flow controllers with highly uniform gas distribution.
Substrate chuck heating up to 300°C or cooling down to -20°C by stable process temperatures control.
ICP plasma up to 2000W with Tornado ICP coil increasing deposition under low temperature.
Low damage, high rate process, high aspect ratio.
Wafer clamping with helium backside cooling helps anisotropic etch.
RF powered showerhead with optimised gas distribution.
Chamber
Aluminum hard anodized chamber.
Chamber temperature control by using water chiller/heater.
