Concentration Monitor CMP

KxS Technologies delivers advanced in-line refractive index measurement solutions for semiconductor fabs. Our DCM-10 Inline Concentration Monitor ensures precision, speed, stability and reliability in chemical concentration control, helping customers achieve yield improvement, enhanced process control and stability as well as cost efficiency. 

Application Areas:

CMP Slurry Monitoring
• Maintain correct slurry density and oxidizer concentration (H₂O₂) for copper, tungsten, and ILD planarization.
• Prevent defects, improve yield, and reduce cost-of-ownership.
• Inline refractive index measurement correlates slurry composition with wafer planarization performance.

Wafer Cleaning Solutions
• SC-1: NH₃ + H₂O₂ + DI water.
• SC-2: HCl + H₂O₂ + DI water.
• Ensures correct chemical ratios for particle removal and surface preparation.

Etching Processes
• Buffered Oxide Etch (BOE): HF-based mixtures for oxide removal.
• Backside Poly Etch: HF:HNO₃ blends for selective polycrystalline silicon removal.
• Silicon Wet Etch: 50% KOH for MEMS and deep etch applications.
• Titanium Etch: Acid blends (H₂SO₄:HNO₃:H₃PO₄) for controlled material removal.

Post-CMP Cleaning
• Extend bath life and maintain chemical integrity in cleaning solutions.
• Reduces chemical waste and ensures consistent wafer surface quality.

Specialty Chemical Monitoring
• Examples: EKC265™ residue remover, NMP, TMAH, IPA, PEG, citric acid, acetic acid.
• Critical for advanced node processes requiring precise concentration control.