With the increase in size of LCD panels and glass need of manufacturing, manufacturing equipment has also become larger, requiring ever-larger equipment investments.
Applications
Amorphous Silicon (a-Si).
Silicon Nitride (SiNx).
Silicon Oxide, Silane based (SiOx).
Silicon Oxide, TEOS based (SiOx).
Configurations
Flexible substrate size up to 550 x 650 mm2 (glass).
Excellent thin-film uniformity of less than ±3%.
Up to six 7 gas lines per process chamber standard.
In-situ chamber clean using remote plasma source.
Substrate heating up to 380°C with stable temperature control.
Options
Cassette port.
Patented TEOS vaporizing system (TVS) for TEOS deposition.
Extra spare port for OES, RGA or extra process monitoring.
