Syskey
ALE
Syskey
ALE
Flexible substrate size up to 12 inch in diameter
Etch system with the capability to etch in ICP, RIE, ALE and DRIE mode in the same reactor.
Excellent thin-film uniformity of less than ±3%.
Brand
Syskey
Product Number
ALE-sys
Size
up to 12 inch
Status
Request information
As the functional size of the device is further reduced, further use of ALE is required to achieve its required accuracy.
Applications
- Silicon and silicon-based compounds (SiO2, Si3N4).
- MEMS.
- Metal, silicon, resist etching.
Configurations
- Flexible substrate size up to 12 inch in diameter.
- Etch system with the capability to etch in ICP, RIE, ALE and DRIE mode in the same reactor.
- Excellent thin-film uniformity of less than ±3%.
- Mass flow controllers with highly uniform gas distribution.
- Substrate chuck heating up to 300°C or cooling down to -20°C by stable process temperatures control.
- ICP plasma up to 2000W with Tornado ICP coil increasing deposition under low temperature.
- Low damage, high rate process, high aspect ratio.
- Wafer clamping with helium backside cooling helps anisotropic etch.
- Plasma cleaning of chamber is possible for some materials.
- RF powered showerhead with optimised gas distribution.
Chamber
- Aluminum or stainless steel chamber with small footprint for fast cycle time.
- Chamber temperature control by using water chiller/heater.
Options
- Electrostatic Chuck.
- Endpoint monitors (OES, laser) compatibility.
- Cluster allows for vacuum transfer of substrates.