UHV Sputter

For UHV environment, it is very important to scientific research, because experiments often require surfaces to be maintained in a contamination-free state for the duration of the process.

Applications

• Semiconductors.
• Nanotechnology.
• Product QC & QA.
• Oxide, Nitride and Metal materials research.
• Solar-cell.
• Optical Research.
• Materials Research.

Configurations

• Flexible substrate size up to 12 inch.
• Excellent thin-film uniformity of less than ±3%.
• Magnetron sputtering sources (up to 8 sources) with optional target sizes.
• RF, DC or pulsed-DC for non-conductive or conductive target.
• Deposition of multi-layer films with selected target materials.
• Mass flow controllers (up to 4 gas lines).
• Substrate holder heating up to 1000°C.
• Adjustable substrate to target spacing.
• Shutters are installed each sputtering source and substrate.

Chamber

• Chamber metal sealing and heater backing to 150°C.
• Flexible chamber sizes depend on substrate size and applications.
• Full range vacuum gauge with display and Baratron gauge for closed-loop pressure control.
• Ultimate vacuum of chamber about 10^-10 Torr.

Options

• Intergrated with others vacuum system.
• Combined with Ion-source, thermal source, E-beam, etc.
• RF or DC bias switching.
• Thickness Monitor.
• Substrate RF plasma cleaning.
• Extra spare port for OES, RGA or extra process monitoring.