UHV E-Beam

For UHV environment, it is very important to scientific research, because experiments often require surfaces to be maintained in a contamination-free state for the duration of the process.

Applications

• Optoelectronic material (LED/Laser Diode).
• Communication device.
• Semiconductor device.

Configurations

• Flexible substrate size up to 8 inch wafer in diameter.
• Excellent thin-film uniformity of less than ±3%.
• Multi-pocket rotary e-beam sources (1/2/4/6 crucibles) with water cooled crucible.
• Auto deposition rate control.
• Multiple sources with sequential operation or co-deposition.
• Substrate holder-cooling (nitrogen liquid down to -70°C) or heating (up to 800°C).

Chamber

• Flexible chamber sizes depend on substrate size and applications.
• Chamber metal sealing and heater backing to 150℃.
• Ultimate vacuum of chamber about 10^-10 Torr.

Options

• Intergrated with Load-Lock, robot arm, glove box.
• Combined with ion-source, sputter gun, E-beam, plasma cleaning or assisted.