Post-CMP cleaning solution for metals (Cu, W, Al)

This high-performance post-CMP cleaning solution is engineered to deliver superior cleaning efficacy while maintaining an exceptional safety profile and ultra-low metal corrosion and etch rates. Designed for advanced semiconductor manufacturing, it effectively removes CMP residues and particles without compromising critical film integrity.

The formulation provides outstanding cleaning performance for copper, tungsten, and aluminum, with a particularly low copper and aluminum etch rate, ensuring excellent yield protection. Its extended Q-time enhances process flexibility and stability, supporting high-volume manufacturing requirements.

The solution demonstrates excellent material compatibility and cleaning effectiveness across a wide range of films, including W, SiN, TEOS, Ti, TiN, Co, and Al. Ultra-low etch rates combined with effective residue removal make it especially suitable for sensitive and complex device structures.

With exceptional cleaning performance on tungsten and TEOS surfaces and broad compatibility with key metal and dielectric materials, this post-CMP cleaner offers a reliable, safe, and efficient solution for next-generation interconnect and metal integration processes.