PECVD

PECVD alternate for depositing a variety of thin films at lower temperatures than conventional CVD methods without losing film quality.

Applications

• Plasma cleaning
• SiO_x, SiN_x, a-Si, DLC and other films.
• Scratch-resistant displays.
• Wear coatings for medical & commercial products.
• Encapsulation, isolation.

Configurations

• Flexible substrate size up to 12 inch wafers in diameter.
• Single wafer or multi wafers.
• Excellent thin-film uniformity of less than ±3%.
• Mass flow controllers with highly uniform gas distribution up to 10 gas lines.
• Substrate chuck heating up to 400°C by stable process temperatures control.
• Direct and remote capacitive coupled plasma (CCP).
• Plasma cleaning of chamber is possible for some materials.

Chamber

• Aluminum with small footprint.
• Chamber temperature control by using heater jacket.

Options

• Intergrated with Load-Lock (single substrate, cassette-to-cassette), glove box.
• RPS for cleaning chamber.
• Optical emission spectrometer.
• Cluster allows for vacuum transfer of substrates.