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Moisture Barrier Bags
(7)
Height
185 mm
230 mm
320 mm
420 mm
590 mm
650 mm
Width
150 mm
180 mm
260 mm
380 mm
550 mm
770 mm
Depth
175 mm
Material
0,08 mm PET (12 µm), AI (7 µm), NY (15 µm) & PE (45 µm)
0,15 mm PET (12 µm), AI (7 µm), NY (15 µm) & PE (115 µm)
0,394 mm PET (12 µm), AI (7 µm), PE (75 µm) & EPE (0,3 mm)
Material Layers
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
Surface resistance
109-1010 Ohm (ANSI/ESD STM11-11
109-1010 Ohm (ANSI/ESD STM11-11)
Puncture strength
96.86-112.55 N (GB/T 39588-2020)
Tensile strength
54.16-70.19% (GB/T 39588-2020)
Cleanliness
ISO 3 (Class 1 FS209E)

Moisture Barrier Bags

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wafer-shipping
WHS-B-1001
Moisture Barrier Bags
Wafer handling products
Small Moisture Barrier bag ESD 150x185 mm
The moisture barrier material has a moisture transmission rate which is sufficiently small to permit storage of semiconductor wafers within the volume for an ex
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11)
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)
wafer-shipping
WHS-B-1002
Moisture Barrier Bags
Wafer handling products
Small Moisture Barrier bag ESD 180x230 mm
The moisture barrier material has a moisture transmission rate which is sufficiently small to permit storage of semiconductor wafers within the volume for an ex
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11)
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)
wafer-shipping
WHS-B-2003
Moisture Barrier Bags
Wafer handling products
Large Moisture Barrier bag ESD 260x320 mm
The moisture barrier material has a moisture transmission rate which is sufficiently small to permit storage of semiconductor wafers within the volume for an ex
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11)
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)
wafer-shipping
WHS-B-2004
Moisture Barrier Bags
Wafer handling products
Large Moisture Barrier bag ESD 380x420 mm
The moisture barrier material has a moisture transmission rate which is sufficiently small to permit storage of semiconductor wafers within the volume for an ex
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11)
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)
wafer-shipping
WHS-B-2005
Moisture Barrier Bags
Wafer handling products
Large Moisture Barrier bag ESD 550x590 mm
The moisture barrier material has a moisture transmission rate which is sufficiently small to permit storage of semiconductor wafers within the volume for an ex
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11)
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)
wafer-shipping
WHS-B-2006
Moisture Barrier Bags
Wafer handling products
Large Moisture Barrier bag ESD 770x650x175 mm
The moisture barrier material has a moisture transmission rate which is sufficiently small to permit storage of semiconductor wafers within the volume for an ex
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)
wafer-shipping
WHS-B-4007
Moisture Barrier Bags
Wafer handling products
EPE Cushion Moisture Barrier bag 650x420x330 mm
Our bags combine moisture barrier, EPE material and Aluminum Foil in one.
Anti-static layer - Polyester (12 µm) - Aluminum foil (7 µm) - Nylon (15 µm) - Polyethylene (115 µm) - Anti-static layer
109-1010 Ohm (ANSI/ESD STM11-11)
96.86-112.55 N (GB/T 39588-2020)
54.16-70.19% (GB/T 39588-2020)
ISO 3 (Class 1 FS209E)