The RIE system is a single process chamber etcher system using advanced plasma technology. It is designed based on SEMI and ISO standards for 6 inch semiconductor wafer processing, especially suitable for the etching of SiO2, SixNx, Si, etc thin films. The system is configured with a parallel-plate capacitor type plasma reactor, a high quality vacuum system, and an integrated electronic control system for fully automatic process control.
General Specifications:
- Substrate size:< 150 mm
- Process chamber base pressure:< 5x10^3 Torr
- Process chamber leak rate:< 2.7x10^1 Pa/min (2 m Torr/min) (under required-purge condition)
- Max. RF power: 600W
